(Phys.org)—Flash memory—the data storage method often used in phones, computers, and other devices—is continually being miniaturized in order to improve device performance. In an attempt to reduce the short-circuiting that often occurs as memory cells become smaller and more closely packed, researchers have been investigating graphene-based charge trapping memory as an alternative to the traditional floating gate memory. Now in a new paper, researchers have developed a nanographene-based charge trapping memory that exhibits some of the best performance statistics for any such device reported to date.
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